Device Database®

Peripheral Simulation

For Silicon Laboratories, Inc. C8051F412 — Flash Memory

Simulation support for this peripheral or feature is comprised of:

• Dialog boxes which display and allow you to change peripheral configuration.

These simulation capabilities are described below.

Flash Memory Dialog

The Flash Memory dialog displays and configures simulation capabilities of the on-chip Flash memory.

Flash Memory

• <STATUS>displays the current status of the Flash memory.
• FLKEY (Flash Memory Key) accepts a series of key codes to unlock Flash for writing and erasing.
• FLSCL (Flash Memory Control) contains the one-shot timer enable (FOSE), the read always enable (FRAE) and the read write enable settings.
• PSCTL (Program Store Read/Write Control) contains the following settings:
• PSEE (Program Store Erase Enable) is set to erase an entire page of the FLASH program memory provided the PSWE bit is also set.
• PSWE (Program Store Write Enable) is set to allow the MOVX instruction to write a byte of data to FLASH program memory.
• FLSTAT (Flash Memory Status) contains the FLBSY bit.
• FLBSY (Flash Busy) is set while a Flash memory write or erase operation is in progress.
• ONESHOT (Flash Oneshot Period) for clocks slower than 12.5 MHz, determines the length of the Flash read stobe, (in nanoseconds + 5ns) to reduce power consumption.