For Silicon Laboratories, Inc. C8051F042 — Flash Memory
Simulation support for this peripheral or feature is comprised of:
- Dialog boxes which display and allow you to change peripheral configuration.
These simulation capabilities are described below.
Flash Memory Dialog
The Flash Memory dialog displays and configures simulation
capabilities of the on-chip Flash memory.
FLACL (Flash Access Limit) contains the MSB of the
16-bit program memory read/write/erase limit address.
FLSCL (Flash Memory Control) contains the one-shot timer
enable (FOSE), the read always enable (FRAE) and the read write
FLWE (FLASH Read/Write Enable) is set to enable writing
PSCTL (Program Store Read/Write Control) contains the
SFLE (Scratchpad FLASH Memory Access Enable) is set to
direct FLASH reads and writes from user software to the 128-byte
Scratch-pad FLASH sector.
PSEE (Program Store Erase Enable) is set to erase an
entire page of the FLASH program memory provided the PSWE bit is
PSWE (Program Store Write Enable) is set to allow the
MOVX instruction to write a byte of data to FLASH program